基于65nm CMOS工艺的8位DAC电容分压器优化设计

Z. Jaworski
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引用次数: 3

摘要

基于电容的dac是设计人员在纳米技术中实现项目的常见选择。设计套件提供了几种可用作电容器的器件。然而,它们在线性度、最小面积和对工艺干扰的灵敏度方面表现出严重的差异。本文分析了用于65纳米CMOS工艺实现的8位DAC的电容分压器设计。检查用作电容器的各种器件,以便在分辨率,转换时间和布局面积方面选择最适合DAC实现的器件。
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Optimization of capacitive divider for 8-bit DAC realized in 65 nm CMOS process
Capacitor based DACs are common designer's choice for projects realized in nanometer technologies. Designs kits provide several devices that can be used as capacitors. However, they exhibit serious differences in terms of linearity, minimum area and sensitivity to process disturbances The paper presents analysis of capacitive divider design to be used in 8-bit DAC realized in 65 nm CMOS process. Various devices utilized as capacitor are examined in order to select the most suitable one for the DAC implementation in respect to resolution, conversion time and layout area.
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