Osama Abdelkader, H. Mostafa, H. A. Elhamid, A. Soliman
{"title":"工艺变化下FinFET技术缩放对关键路径性能的影响","authors":"Osama Abdelkader, H. Mostafa, H. A. Elhamid, A. Soliman","doi":"10.1109/ICEAC.2015.7352194","DOIUrl":null,"url":null,"abstract":"Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.","PeriodicalId":334594,"journal":{"name":"5th International Conference on Energy Aware Computing Systems & Applications","volume":"169 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The impact of FinFET technology scaling on critical path performance under process variations\",\"authors\":\"Osama Abdelkader, H. Mostafa, H. A. Elhamid, A. Soliman\",\"doi\":\"10.1109/ICEAC.2015.7352194\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.\",\"PeriodicalId\":334594,\"journal\":{\"name\":\"5th International Conference on Energy Aware Computing Systems & Applications\",\"volume\":\"169 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"5th International Conference on Energy Aware Computing Systems & Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEAC.2015.7352194\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th International Conference on Energy Aware Computing Systems & Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEAC.2015.7352194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of FinFET technology scaling on critical path performance under process variations
Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
