{"title":"非晶硅肖特基二极管中电子输运的蒙特卡罗模拟","authors":"I. Lian, R. Hornsey, S. Chamberlain","doi":"10.1109/CCECE.1998.685618","DOIUrl":null,"url":null,"abstract":"Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors.","PeriodicalId":177613,"journal":{"name":"Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341)","volume":"345 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo simulation of electron transport in amorphous silicon Schottky diodes\",\"authors\":\"I. Lian, R. Hornsey, S. Chamberlain\",\"doi\":\"10.1109/CCECE.1998.685618\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors.\",\"PeriodicalId\":177613,\"journal\":{\"name\":\"Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341)\",\"volume\":\"345 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CCECE.1998.685618\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CCECE.1998.685618","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo simulation of electron transport in amorphous silicon Schottky diodes
Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors.
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