{"title":"GaAs场效应管大信号模型及设计应用","authors":"Y. Tajima, B. Wrona, K. Mishima","doi":"10.1109/IEDM.1980.189769","DOIUrl":null,"url":null,"abstract":"A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"162 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaAs FET large signal model and design applications\",\"authors\":\"Y. Tajima, B. Wrona, K. Mishima\",\"doi\":\"10.1109/IEDM.1980.189769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"162 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs FET large signal model and design applications
A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.
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