V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger
{"title":"一种采用SiGe:C双极技术的22 - 39ghz无源混频器","authors":"V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger","doi":"10.1109/MWSYM.2010.5514827","DOIUrl":null,"url":null,"abstract":"Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 22–39 GHz Passive mixer in SiGe:C bipolar technology\",\"authors\":\"V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger\",\"doi\":\"10.1109/MWSYM.2010.5514827\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.\",\"PeriodicalId\":341557,\"journal\":{\"name\":\"2010 IEEE MTT-S International Microwave Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2010.5514827\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5514827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 22–39 GHz Passive mixer in SiGe:C bipolar technology
Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
