Po-Chang Wu, Bin-Da Liu, C. Yeh, S. Tseng, H. Tsai, Y. Juang
{"title":"设计一种0.6 v 0.2 mw CMOS MEMS加速度计","authors":"Po-Chang Wu, Bin-Da Liu, C. Yeh, S. Tseng, H. Tsai, Y. Juang","doi":"10.1109/ICCE-TW.2015.7216989","DOIUrl":null,"url":null,"abstract":"This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.","PeriodicalId":340402,"journal":{"name":"2015 IEEE International Conference on Consumer Electronics - Taiwan","volume":"421 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of a 0.6-V 0.2-mW CMOS MEMS accelerometer\",\"authors\":\"Po-Chang Wu, Bin-Da Liu, C. Yeh, S. Tseng, H. Tsai, Y. Juang\",\"doi\":\"10.1109/ICCE-TW.2015.7216989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.\",\"PeriodicalId\":340402,\"journal\":{\"name\":\"2015 IEEE International Conference on Consumer Electronics - Taiwan\",\"volume\":\"421 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Consumer Electronics - Taiwan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCE-TW.2015.7216989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Consumer Electronics - Taiwan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE-TW.2015.7216989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-μm CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (ΔΣ ADC). It occupies an area of only 0.8 × 1 mm2 and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the ±6 g sensing range.