{"title":"大功率LED上硅基热电器件的散热性能","authors":"Jen-Hau Cheng, Chun-Kai Liu, Y. Chao, R. Tain","doi":"10.1109/ICT.2005.1519885","DOIUrl":null,"url":null,"abstract":"In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"83","resultStr":"{\"title\":\"Cooling performance of silicon-based thermoelectric device on high power LED\",\"authors\":\"Jen-Hau Cheng, Chun-Kai Liu, Y. Chao, R. Tain\",\"doi\":\"10.1109/ICT.2005.1519885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.\",\"PeriodicalId\":422400,\"journal\":{\"name\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"83\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2005.1519885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2005.1519885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cooling performance of silicon-based thermoelectric device on high power LED
In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.