高级合成AES电路功率侧漏的实证分析

Takumi Mizuno, Hiroki Nishikawa, Xiangbo Kong, Hiroyuki Tomiyama
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引用次数: 0

摘要

许多物联网(IoT)设备和集成电路(IC)卡都受到了侧信道攻击的影响。功率分析攻击是最危险的边信道攻击之一,它通过分析电源走线来识别密码电路的密钥。通常,在执行时间和电路面积之间存在权衡。然而,安全性和性能之间的相关性还有待确定。在本研究中,我们研究了高级加密标准(AES)电路的侧信道攻击阻力与性能(执行时间和电路面积)之间的关系。采用高级综合和逻辑综合的方法设计了11种不同性能的AES电路。在11个AES电路中,6个是不带侧信道攻击对抗的电路,5个是带掩蔽对抗的电路。我们采用基于t检验的四个指标来评估侧信道攻击阻力。基于相关系数的结果显示了侧信道攻击阻力与性能之间的相关关系。相关性根据四个度量或屏蔽对策而变化。我们认为设计者在考虑安全性时应该改变对电路设计的态度。
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Empirical analysis of power side-channel leakage of high-level synthesis designed AES circuits
Many internet of things (IoT) devices and integrated circuit (IC) cards have been compromised by side-channel attacks. Power-analysis attacks, which identify the secret key of a cryptographic circuit by analyzing the power traces, are among the most dangerous side-channel attacks. Gen-erally, there is a trade-off between execution time and circuit area. However, the correlation between security and performance has yet to be determined. In this study, we investigate the cor-relation between side-channel attack resistance and performance (execution time and circuit area) of advanced encryption standard (AES) circuits. Eleven AES circuits with different performances are designed by high-level synthesis and logic synthesis. Of the eleven AES circuits, six are circuits with no side-channel attack countermeasures and five are circuits with masking countermeasures. We employ four metrics based on a T-test to evaluate the side-channel attack resistance. The results based on the correlation coefficient show the correlation between side-channel attack resistance and performance. The correlation varies according to four metrics or masking countermeasure. We argue that designers should change their attitudes towards circuit design when considering security.
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