1.8V -0.18 μm CMOS频率输出温度传感器

Wenyuan Li, Dehua Zhou
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引用次数: 3

摘要

基于阈值电压随温度变化的特点,设计了一种紧凑的频率输出温度传感器。在现代电子应用中,片上温度监测对优化性能至关重要。本文给出了一种采用低成本的0.18 $\mu\mathbf{m}$ CMOS技术,单电源电压为1.8 V的传感器制造方案。为了检测温度,芯片通过阈值电压获取电路(VG)来获取mosfet的阈值电压,而不是通常使用的双极晶体管的基极发射极电压。然后,为了处理高灵敏度电压信号,使用压控振荡器将电压信号转换为振荡信号,振荡信号的频率与温度成线性关系。经过一点微调后,传感器在0到$+150^{\circ} \mathrm{C}$的温度范围内具有很高的线性度,灵敏度为$3\text{MHz}/^{\circ} \mathrm{C}$,不准确率为12%。此外,功耗低于1.2 $\mu \ mathm {W}$,芯片面积约为0.06 $\text{mm}^{2}$。这些特性使该设计成为便携式应用程序中非常合适的解决方案。
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1.8V -0.18-μm CMOS Temperature Sensor with Frequency Output
This paper presents a compact frequency output temperature sensor based on the fact that threshold voltage fluctuates according to the temperature. In modern electronic applications, on-chip temperature monitoring is crucial to optimize performance. This paper gives a project of a sensor that has been fabricated using low cost 0.18 $\mu\mathbf{m}$ CMOS technology with a single 1.8 V supply voltage. In order to sense the temperature, the chip get the threshold voltage of the MOSFETs, instead of the usually used base emitter voltage of the bipolar transistor, with the threshold voltage get circuit (VG). Then, with the intention to deal with the high sensitivity voltage signal, VCO is used to transfer the voltage signal into oscillating signal, whose frequency can be seen linearly proportional to the temperature. After one-point trimming, the sensor exhibits a high linearity over a temperature range of 0 to $+150^{\circ} \mathrm{C}$, achieving sensitivity of $3\text{MHz}/^{\circ} \mathrm{C}$ with the inaccuracy rate of 12%. Also, the power consumption is below 1.2 $\mu \mathrm{W}$, and the area of the chip is approximately 0.06 $\text{mm}^{2}$. These features make this design a highly suitable solution in the case of portable applications.
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