V. Krozer, G. Loata, J. Grajal de la Fuente, P. Sanz
{"title":"肖特基二极管变容倍频器太赫兹发电的局限性","authors":"V. Krozer, G. Loata, J. Grajal de la Fuente, P. Sanz","doi":"10.1109/THZ.2002.1037603","DOIUrl":null,"url":null,"abstract":"We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f/sup -3/ instead of the f/sup -2/ predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Limitations in THz power generation with Schottky diode varactor frequency multipliers\",\"authors\":\"V. Krozer, G. Loata, J. Grajal de la Fuente, P. Sanz\",\"doi\":\"10.1109/THZ.2002.1037603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f/sup -3/ instead of the f/sup -2/ predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.\",\"PeriodicalId\":143116,\"journal\":{\"name\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/THZ.2002.1037603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THZ.2002.1037603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Limitations in THz power generation with Schottky diode varactor frequency multipliers
We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f/sup -3/ instead of the f/sup -2/ predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.
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