{"title":"用非平衡分布函数求解HgCdTe异质结构输运方程的数值方法","authors":"K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel","doi":"10.1109/NUSOD.2016.7546994","DOIUrl":null,"url":null,"abstract":"This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vector. In this same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients and the gradient of temperature on the physical parameters of the heterostructure is taken into account.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"439 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The numerical method for solving the transport equations in HgCdTe heterostructures using the nonequilibrium distribution functions\",\"authors\":\"K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel\",\"doi\":\"10.1109/NUSOD.2016.7546994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vector. In this same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients and the gradient of temperature on the physical parameters of the heterostructure is taken into account.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"439 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7546994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7546994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The numerical method for solving the transport equations in HgCdTe heterostructures using the nonequilibrium distribution functions
This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vector. In this same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients and the gradient of temperature on the physical parameters of the heterostructure is taken into account.
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