二极管几何形状对亚谐波混频器本振突破的影响

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772310

V. Gutta, A. Fattorini, A. Parker, J. Harvey

{"title":"二极管几何形状对亚谐波混频器本振突破的影响","authors":"V. Gutta, A. Fattorini, A. Parker, J. Harvey","doi":"10.1109/EMICC.2008.4772310","DOIUrl":null,"url":null,"abstract":"An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers\",\"authors\":\"V. Gutta, A. Fattorini, A. Parker, J. Harvey\",\"doi\":\"10.1109/EMICC.2008.4772310\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.\",\"PeriodicalId\":344657,\"journal\":{\"name\":\"2008 European Microwave Integrated Circuit Conference\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2008.4772310\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究了反并联二极管次谐波混频器中电流-电压特性的不对称性和本振的突破。29个裸反并联二极管对电路，已经被用来识别二极管几何形状的那些方面，这些方面对二极管失配有强烈的影响，从而导致本振突破。该电路是在六英寸砷化镓高电子迁移率晶体管工艺上制造的。

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Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers

An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.

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2008 European Microwave Integrated Circuit Conference

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