在晶圆片边缘检测和减轻炉内退火引起的变形

Leon van Dijk, A. Charley, M. Stokhof, Ronald Otten, S. Van Elshocht, Bert Jongbloed, P. Leray, Richard J. F. van Haren
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引用次数: 0

摘要

技术节点的每一次进步都对半导体行业提出了挑战,以实现更严格的产品上覆盖(OPO)要求。随着最新的浸入式扫描仪性能远低于2纳米覆盖层,OPO预算越来越多地由非光刻贡献者决定。因此,在大批量制造环境中实现严格的覆盖规格远非微不足道,特别是在加工控制更差的晶圆边缘区域。例如,反应离子蚀刻(RIE),应力薄膜的沉积和显著的场内(或模具内)应力分布的存在都是已知的导致晶圆边缘区域局部变形的原因。集成电路制造过程中的退火步骤是晶圆变形的另一个来源。炉内退火是一种特殊的退火步骤。在炉内退火过程中,许多晶圆片同时被加热,晶圆片在一段固定的时间内保持在高温下,大约几分钟到几小时。虽然在一般情况下,炉内退火不会造成明显的晶圆变形,但在较高的退火温度下,使用标准板有时会在晶圆边缘区域观察到局部变形。在这项工作中,我们建立了一个控制实验来表征炉内退火过程可能引起的局部变形。为此,晶圆片在不同的炉内退火设置下加工,即温度和斜坡速率,并使用两种不同的船型。在NXT:1970Ci扫描仪上使用其SMASH对准系统精确而密集地测量了诱导畸变。我们将看到,根据工艺条件和船型,在晶圆边缘会发生局部扭曲。这些扭曲的位置与船的晶圆支撑位置一致,因此它们也被称为船标。讨论了减轻炉内退火引起的变形的几个解决方向。一个非常有效的解决方案是采用优化的船设计,根据工艺条件,可以防止高温下的局部变形。因此,在退火加工步骤的开发阶段,有一个检测系统可以检测并触发相应的行动,以减轻炉内退火引起的变形,这将是有益的。我们将证明,扫描仪可以用作这样一个检测系统,因为它的在线计量能够检测到与船的标志相关的签名。
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Detection and mitigation of furnace anneal induced distortions at the wafer edge
Every advance in technology node challenges the semiconductor industry to achieve even tighter on-product overlay (OPO) requirements. With the latest immersion scanners performing well below the sub-2-nm overlay level, the OPO budget is more and more determined by non-lithography contributors. Achieving the tight overlay specifications in a high-volume manufacturing environment is therefore far from trivial, especially in the wafer edge region where processing is even less well controlled. For example, Reactive Ion Etch (RIE), the deposition of stressed thin films and the presence of significant intra-field (or intra-die) stress distributions are all known to cause localized distortions in the wafer edge region. Annealing steps during integrated circuit manufacturing are another source of wafer deformation. Furnace anneal is one particular type of annealing step. During furnace anneal processing, many wafers are heated-up simultaneously and wafers stay at elevated temperatures for a fixed time on the order of minutes to hours. Although in general, furnace anneal does not cause significant wafer deformations, local distortions are sometimes observed in the wafer edge region by using standard boats at higher anneal temperatures. In this work, we have setup a controlled experiment to characterize the local distortions that can be induced by furnace anneal processes. To this end, wafers are processed with various furnace anneal settings, i.e. temperature and ramp rate, and two different boat types are used. The induced distortions are accurately and densely measured on an NXT:1970Ci scanner using its SMASH alignment system. We will see that, depending on the process conditions and boat type, local distortions occur at the wafer edge. The locations of these distortions coincide with the wafer support positions of the boat and therefore they are also referred to as boat marks. Several solution directions for mitigating furnace anneal induced distortions will be discussed. A very effective solution is the employment of an optimized boat design that, depending on the process conditions, can prevent the localized distortions at elevated temperatures. It would therefore be beneficial to have a detection system in place that can detect and consequently trigger actions to mitigate furnace anneal induced distortions during the development phase of anneal processing steps. We will demonstrate that the scanner can be used as such a detection system as its inline metrology is able to detect signatures related to the boat marks.
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