{"title":"平衡双栅GaAs FET倍频器","authors":"R. Stancliff","doi":"10.1109/MWSYM.1981.1129849","DOIUrl":null,"url":null,"abstract":"A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Balanced Dual Gate GaAs FET Frequency Doublers\",\"authors\":\"R. Stancliff\",\"doi\":\"10.1109/MWSYM.1981.1129849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.