{"title":"晶圆键合硅光子学","authors":"D. Liang, A. Fang, Hui-wen Chen, J. Bowers","doi":"10.1109/AVFOP.2008.4653168","DOIUrl":null,"url":null,"abstract":"Compound semiconductors-silicon integration has never been of such great demand until the recent difficulty to maintain Moore's law in the microelectronics industry. Recently, we have developed a hybrid silicon evanescent platform (HSEP), which enables the coherent marriage of incompatible characteristics of III-V and silicon, i.e., direct bandgap and high mobility at III-V side and mature CMOS manufacturability and low-optical loss at silicon side. A series of critical components including lasers, amplifiers, photodetectors, and modulators have been successfully implemented in this platform.","PeriodicalId":142148,"journal":{"name":"2008 IEEE Avionics, Fiber-Optics and Photonics Technology Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wafer bonded silicon photonics\",\"authors\":\"D. Liang, A. Fang, Hui-wen Chen, J. Bowers\",\"doi\":\"10.1109/AVFOP.2008.4653168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compound semiconductors-silicon integration has never been of such great demand until the recent difficulty to maintain Moore's law in the microelectronics industry. Recently, we have developed a hybrid silicon evanescent platform (HSEP), which enables the coherent marriage of incompatible characteristics of III-V and silicon, i.e., direct bandgap and high mobility at III-V side and mature CMOS manufacturability and low-optical loss at silicon side. A series of critical components including lasers, amplifiers, photodetectors, and modulators have been successfully implemented in this platform.\",\"PeriodicalId\":142148,\"journal\":{\"name\":\"2008 IEEE Avionics, Fiber-Optics and Photonics Technology Conference\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Avionics, Fiber-Optics and Photonics Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AVFOP.2008.4653168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Avionics, Fiber-Optics and Photonics Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AVFOP.2008.4653168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compound semiconductors-silicon integration has never been of such great demand until the recent difficulty to maintain Moore's law in the microelectronics industry. Recently, we have developed a hybrid silicon evanescent platform (HSEP), which enables the coherent marriage of incompatible characteristics of III-V and silicon, i.e., direct bandgap and high mobility at III-V side and mature CMOS manufacturability and low-optical loss at silicon side. A series of critical components including lasers, amplifiers, photodetectors, and modulators have been successfully implemented in this platform.