{"title":"单势垒纳米结构的亚毫米二极管","authors":"N. Goncharuk","doi":"10.1109/IEEE-IWS.2013.6616772","DOIUrl":null,"url":null,"abstract":"Microwave diode on AlGaAs/GaAs single barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer is investigated in the framework of small-signal theory taking into account diode parasitic resistance. We consider both transit and injection time of electron since they are comparable and determine operating frequency of the diode. Calculated values of maximal negative conductance are near 200mS and 30mS for the diodes with operating frequencies 270GHz to 880GHz, respectively.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Submillimeter diode on single barrier nanostructure\",\"authors\":\"N. Goncharuk\",\"doi\":\"10.1109/IEEE-IWS.2013.6616772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Microwave diode on AlGaAs/GaAs single barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer is investigated in the framework of small-signal theory taking into account diode parasitic resistance. We consider both transit and injection time of electron since they are comparable and determine operating frequency of the diode. Calculated values of maximal negative conductance are near 200mS and 30mS for the diodes with operating frequencies 270GHz to 880GHz, respectively.\",\"PeriodicalId\":344851,\"journal\":{\"name\":\"2013 IEEE International Wireless Symposium (IWS)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2013.6616772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2013.6616772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Submillimeter diode on single barrier nanostructure
Microwave diode on AlGaAs/GaAs single barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer is investigated in the framework of small-signal theory taking into account diode parasitic resistance. We consider both transit and injection time of electron since they are comparable and determine operating frequency of the diode. Calculated values of maximal negative conductance are near 200mS and 30mS for the diodes with operating frequencies 270GHz to 880GHz, respectively.
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