{"title":"MOS功率晶体管测温网络的矢量分析","authors":"B. Torzyk, B. Więcek","doi":"10.14313/par_242/83","DOIUrl":null,"url":null,"abstract":"The article presents the concept of using VNA (Vector Network Analyzer) to measure the temperature of the MOS transistor junction. The method assumes that the scattering parameters of the network consisting of the transistor depend on the temperature. The tests confirmed the influence of temperature on the S11 parameter and the input network capacity during ambient temperature changes in the range of 35–70 °C. Measurements were made for the gate-source (G-S) input of the system. The measurements were carried-out with the transistor in the ON/OFF states. In order to validate the measurements, the temperature of the tested element was recorded with the MWIR Cedip-Titanium thermal imaging camera.","PeriodicalId":383231,"journal":{"name":"Pomiary Automatyka Robotyka","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vector Analysis of Electrical Networks for Temperature Measurement of MOS Power Transistors\",\"authors\":\"B. Torzyk, B. Więcek\",\"doi\":\"10.14313/par_242/83\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article presents the concept of using VNA (Vector Network Analyzer) to measure the temperature of the MOS transistor junction. The method assumes that the scattering parameters of the network consisting of the transistor depend on the temperature. The tests confirmed the influence of temperature on the S11 parameter and the input network capacity during ambient temperature changes in the range of 35–70 °C. Measurements were made for the gate-source (G-S) input of the system. The measurements were carried-out with the transistor in the ON/OFF states. In order to validate the measurements, the temperature of the tested element was recorded with the MWIR Cedip-Titanium thermal imaging camera.\",\"PeriodicalId\":383231,\"journal\":{\"name\":\"Pomiary Automatyka Robotyka\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Pomiary Automatyka Robotyka\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14313/par_242/83\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Pomiary Automatyka Robotyka","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14313/par_242/83","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vector Analysis of Electrical Networks for Temperature Measurement of MOS Power Transistors
The article presents the concept of using VNA (Vector Network Analyzer) to measure the temperature of the MOS transistor junction. The method assumes that the scattering parameters of the network consisting of the transistor depend on the temperature. The tests confirmed the influence of temperature on the S11 parameter and the input network capacity during ambient temperature changes in the range of 35–70 °C. Measurements were made for the gate-source (G-S) input of the system. The measurements were carried-out with the transistor in the ON/OFF states. In order to validate the measurements, the temperature of the tested element was recorded with the MWIR Cedip-Titanium thermal imaging camera.
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