{"title":"毫米波大功率放大器的非线性漏极电阻pHEMT模型","authors":"A. Inoue, H. Amasuga, S. Goto, M. Miyazaki","doi":"10.1109/EMICC.2008.4772284","DOIUrl":null,"url":null,"abstract":"A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers\",\"authors\":\"A. Inoue, H. Amasuga, S. Goto, M. Miyazaki\",\"doi\":\"10.1109/EMICC.2008.4772284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.\",\"PeriodicalId\":344657,\"journal\":{\"name\":\"2008 European Microwave Integrated Circuit Conference\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2008.4772284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers
A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.
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