S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley
{"title":"InGaAs-InAIGaAs量子阱激光器高达440 GHz重复频率的谐波模型锁定","authors":"S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley","doi":"10.1109/CLEOE.1998.719264","DOIUrl":null,"url":null,"abstract":"The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Harmonic Modelocking at up to 440 GHz Repetition Rates in InGaAs-InAIGaAs Quantum Well Lasers\",\"authors\":\"S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley\",\"doi\":\"10.1109/CLEOE.1998.719264\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.\",\"PeriodicalId\":404067,\"journal\":{\"name\":\"CLEO/Europe Conference on Lasers and Electro-Optics\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CLEO/Europe Conference on Lasers and Electro-Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOE.1998.719264\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CLEO/Europe Conference on Lasers and Electro-Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.1998.719264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Harmonic Modelocking at up to 440 GHz Repetition Rates in InGaAs-InAIGaAs Quantum Well Lasers
The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.
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