与银河系中速H I相关的高电离物质的形成

Back to the Galaxy Pub Date : 2008-05-29 DOI:10.1063/1.43932
J. Sokolowski, L. Danly
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引用次数: 0

摘要

我们报告了与银河系中速(IV)拱相关的H I, Al III, Si IV和C IV类光产生的初步结果。我们发现太阳丰度气体的光电离不能再现这些物种观测到的柱密度,而使用恒星辐射场和观测到的x射线背景的模型可以再现金属丰度耗尽的气体中观测到的柱密度。所需的金属消耗模式与它们融入标准星际颗粒是一致的。对光晕辐射场强度的限制表明,IV弓的材料分布均匀,局部密度为~ 10−2 cm−3,填充因子为阶单位。这些结果表明,在银晕中至少有一些高电离物质Si IV和C IV的产生中,光电离起着关键作用。
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The formation of high-ionization species associated with Galactic, intermediate velocity H I
We report first results on the photoproduction of the species H I, Al III, Si IV, and C IV kinematically associated with the Galactic intermediate‐velocity (IV) arch. We find that photoionization of solar abundance gas cannot reproduce the observed column densities of these species, while models using stellar radiation fields and the observed x‐ray background can reproduce the observed columns in gas having depleted metal abundances. The pattern of metal depletions required is consistent with their incorporation into standard interstellar grains. Limits on the intensity of the halo radiation field indicate that the material of the IV arch is smoothly distributed, having a local density ∼10−2 cm−3 and filling factor of order unity. These results suggest that photoionization plays a key role in the production of at least some of the high‐ionization species Si IV and C IV in the Galactic halo.
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