具有改进电源抑制的超低功耗低差(LDO)稳压器

Hazem H. Hammam, H. Omran, S. Ibrahim
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引用次数: 0

摘要

对于大多数低压差稳压器(ldo)来说,在宽频率范围内具有高电源抑制(PSR)是一个非常重要的规格。提出了一种采用高频PSR和回路稳定性补偿两种方法的低功率LDO。所提出的LDO在宽频率范围内以低功耗和小面积消耗实现高PSR。LDO采用65 nm CMOS技术,在输出负载电流高达25 mA和输出负载电容4 μF时,在30 MHz范围内实现了优于77 dB的PSR。该设计适用于电容负载(封顶)ldo,输出负载电流范围宽至100ma,输出负载电容范围为1 μF至12 μF。该LDO的空载静态电流为5 μA,面积为400 μm × 200 μm。
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Ultra-Low-Power Low Drop-Out (LDO) Voltage Regulator With Improved Power Supply Rejection
Having a high-power supply rejection (PSR) over a wide range of frequencies is a very important specification for most of low-dropout voltage regulators (LDOs). A low-power LDO with 2 methods of high-frequency PSR and loop stability compensation techniques is presented in this paper. The proposed LDO achieves a high PSR over a wide frequency range with low power and small area consumption. The LDO is implemented in 65 nm CMOS technology and achieves a PSR better than 77 dB up to 30 MHz for output load currents up to 25 mA and a 4 μF output load capacitor. The design is suitable for capacitor loaded (Capped) LDOs with a wide output load current range up to 100 mA and output load capacitor range from 1 μF to 12 μF. The proposed LDO consumes a no-load quiescent current of 5 μA and an area of 400 μm × 200 μm.
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