{"title":"GaAs/GaAlAs自组装量子点增益特性研究","authors":"Dharmendra Kumar, C. Negi, J. Kumar, S. Gupta","doi":"10.1109/ICMAP.2013.6733542","DOIUrl":null,"url":null,"abstract":"The effect of size and shape anisotropy on the gain characteristics of strain free GaAs/AlGaAs quantum dots is theoretically investigated. QD is modelled by anisotropic parabolic potential along x-y plane. Luttinger Hamiltonian has been numerically diagonalized over a wider range of shape anisotropy and size to obtain the eigenvalues and eigenvectors. The dipole matrix elements are obtained for interband transitions and gain spectra are calculated.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots\",\"authors\":\"Dharmendra Kumar, C. Negi, J. Kumar, S. Gupta\",\"doi\":\"10.1109/ICMAP.2013.6733542\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of size and shape anisotropy on the gain characteristics of strain free GaAs/AlGaAs quantum dots is theoretically investigated. QD is modelled by anisotropic parabolic potential along x-y plane. Luttinger Hamiltonian has been numerically diagonalized over a wider range of shape anisotropy and size to obtain the eigenvalues and eigenvectors. The dipole matrix elements are obtained for interband transitions and gain spectra are calculated.\",\"PeriodicalId\":286435,\"journal\":{\"name\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMAP.2013.6733542\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Microwave and Photonics (ICMAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMAP.2013.6733542","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots
The effect of size and shape anisotropy on the gain characteristics of strain free GaAs/AlGaAs quantum dots is theoretically investigated. QD is modelled by anisotropic parabolic potential along x-y plane. Luttinger Hamiltonian has been numerically diagonalized over a wider range of shape anisotropy and size to obtain the eigenvalues and eigenvectors. The dipole matrix elements are obtained for interband transitions and gain spectra are calculated.
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