用于100ghz以上应用的集成肖特基结构

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772264

Byron Alderman, H. Sanghera, Bertrand Thomas, David Matheson, A. Maestrini, Hui Wang, J. Treuttel, Jose V. Siles, Steve Davies, T. Narhi

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引用次数: 12

摘要

介绍了用于100ghz以上应用的GaAs集成肖特基结构制造的最新进展。讨论了两种方法;使用GaAs铸造服务制造集成电路，再加上基于这些结构的后处理研究，以及使用定制研究实验室制造离散和集成肖特基结构。

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Integrated Schottky Structures for Applications Above 100 GHz

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

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2008 European Microwave Integrated Circuit Conference

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