低损耗，低温PVD SiN波导

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673874

N. Golshani, T. Witters, J. Mcgurk, P. Heyn, J. de Coster, A. Milenin, A. Thiam, A. Mingardi, P. Verheyen, M. Pantouvaki, J. Campenhout

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引用次数: 2

摘要

我们报告了低温(<400˚C) SiN波导，使用物理气相沉积技术，迄今为止在BEOL兼容工艺中证明了最低的传播损耗。C波段和o波段的单模波导的传输损耗分别低至0.2 dB/cm和0.43 dB/cm。

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Low-loss, low-temperature PVD SiN waveguides

We report low-temperature (<400˚C) SiN waveguides with lowest propagation losses demonstrated so far for BEOL compatible processes, using a physical vapor deposition technique. Propagation losses as low as 0.2 dB/cm and of 0.43 dB/cm are achieved for single-mode waveguides across the C- and O-band, respectively.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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