{"title":"SiC和Si功率器件dc/dc升压变换器的比较研究","authors":"A. Charalambous, G. Christidis, E. Tatakis","doi":"10.1109/ESARS.2012.6387422","DOIUrl":null,"url":null,"abstract":"In this paper, the design and implementation of a 500W dc/dc boost converter using a SiC VJFET and a SiC Schottky Barrier Diode (SBD) is investigated. Firstly, the converter is designed for stepping up a voltage of 48 V to 100 V. It is compared with an identical, more conventional boost converter that employs a Si MOSFET and a Si pn diode. An efficiency of 95.12% has been achieved by the SiC boost converter under nominal conditions. Secondly, the duty cycle is cranked up, as to investigate the maximum voltage step-up that can be attained by the implemented converter. A record-high voltage conversion ratio of 7.65 has been demonstrated, bringing the input of 48 V to 367.4 V, under a duty cycle of 0.88 and an efficiency of 90.91%. The great efficiency and voltage step-up allow for this simple boost converter, to be an affordable and appealing solution for every application where a voltage step-up is required, since it can save up energy, space and weight.","PeriodicalId":243822,"journal":{"name":"2012 Electrical Systems for Aircraft, Railway and Ship Propulsion","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Comparative study of the dc/dc boost converter with SiC and Si power devices\",\"authors\":\"A. Charalambous, G. Christidis, E. Tatakis\",\"doi\":\"10.1109/ESARS.2012.6387422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the design and implementation of a 500W dc/dc boost converter using a SiC VJFET and a SiC Schottky Barrier Diode (SBD) is investigated. Firstly, the converter is designed for stepping up a voltage of 48 V to 100 V. It is compared with an identical, more conventional boost converter that employs a Si MOSFET and a Si pn diode. An efficiency of 95.12% has been achieved by the SiC boost converter under nominal conditions. Secondly, the duty cycle is cranked up, as to investigate the maximum voltage step-up that can be attained by the implemented converter. A record-high voltage conversion ratio of 7.65 has been demonstrated, bringing the input of 48 V to 367.4 V, under a duty cycle of 0.88 and an efficiency of 90.91%. The great efficiency and voltage step-up allow for this simple boost converter, to be an affordable and appealing solution for every application where a voltage step-up is required, since it can save up energy, space and weight.\",\"PeriodicalId\":243822,\"journal\":{\"name\":\"2012 Electrical Systems for Aircraft, Railway and Ship Propulsion\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Electrical Systems for Aircraft, Railway and Ship Propulsion\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESARS.2012.6387422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Electrical Systems for Aircraft, Railway and Ship Propulsion","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESARS.2012.6387422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative study of the dc/dc boost converter with SiC and Si power devices
In this paper, the design and implementation of a 500W dc/dc boost converter using a SiC VJFET and a SiC Schottky Barrier Diode (SBD) is investigated. Firstly, the converter is designed for stepping up a voltage of 48 V to 100 V. It is compared with an identical, more conventional boost converter that employs a Si MOSFET and a Si pn diode. An efficiency of 95.12% has been achieved by the SiC boost converter under nominal conditions. Secondly, the duty cycle is cranked up, as to investigate the maximum voltage step-up that can be attained by the implemented converter. A record-high voltage conversion ratio of 7.65 has been demonstrated, bringing the input of 48 V to 367.4 V, under a duty cycle of 0.88 and an efficiency of 90.91%. The great efficiency and voltage step-up allow for this simple boost converter, to be an affordable and appealing solution for every application where a voltage step-up is required, since it can save up energy, space and weight.
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