{"title":"所有SiC功率转换器实现50 W/cm3高功率密度的性能评估","authors":"K. Takao, S. Harada, T. Shinohe, H. Ohashi","doi":"10.1109/IPEC.2010.5543727","DOIUrl":null,"url":null,"abstract":"In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150 °C to 250 °C and the current density range from 100 A/cm2 to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3 have been extracted.","PeriodicalId":353540,"journal":{"name":"The 2010 International Power Electronics Conference - ECCE ASIA -","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3\",\"authors\":\"K. Takao, S. Harada, T. Shinohe, H. Ohashi\",\"doi\":\"10.1109/IPEC.2010.5543727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150 °C to 250 °C and the current density range from 100 A/cm2 to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3 have been extracted.\",\"PeriodicalId\":353540,\"journal\":{\"name\":\"The 2010 International Power Electronics Conference - ECCE ASIA -\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 2010 International Power Electronics Conference - ECCE ASIA -\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPEC.2010.5543727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2010 International Power Electronics Conference - ECCE ASIA -","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEC.2010.5543727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
摘要
在大功率密度变换器设计中，功率器件的功率损耗是重要的设计参数，因为它决定了冷却系统的体积。在结温为150 ~ 250℃，电流密度为100 ~ 250 a /cm2的情况下，对采用SiC植入外延MOSFET (SiC- iemosfet)的SiC功率模块的功率损耗进行了评估。利用功率损耗数据，提取了实现功率密度为50W/cm3的SiC-IEMOSFET结温和电流密度的设计准则。
Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3
In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150 °C to 250 °C and the current density range from 100 A/cm2 to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3 have been extracted.
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