射频和中频晶体管增益控制特性的完整规范

L. A. Weldon
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引用次数: 0

摘要

本文描述了一种独特的方法来指定高频晶体管在其整个AGC范围内的增益控制特性。晶体管的正向增益控制特性可以通过曲线示踪器来测量,以允许规范,在公布的限制范围内,高频功率增益与集电极到发射极电压曲线。虽然本报告描述了正向增益控制特性的规格,但该系统也可用于反向增益控制规格。
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A Complete Specification of the Gain Control Characteristics of RF And IF Transistors
This paper describes a unique method for specifying the gain control characteristics of high frequency transistors over their entire AGC range. The forward gain control characteristics of transistors can be measured by means of a curve tracer to permit the specification, within published limits, of the high frequency power gain versus collector to emitter voltage curve. While this report describes the specification of forward gain control characteristics the system can also be used for reverse gain control specifications.
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