{"title":"SOT-MRAM -第三代MRAM存储器开启了新的机遇:热芯片会议2021年8月","authors":"Barry A. Hoberman, J. Nozieres","doi":"10.1109/HCS52781.2021.9567072","DOIUrl":null,"url":null,"abstract":"SOT is a straightforward extension of today’s ‘in production’ MRAM technologies running in major foundries. First memory technology to genuinely have the capability to converge both SRAM and NVM characteristics in advanced CMOS nodes $( \\le 28$ nm). Power, cost, and performance benefits of SOT are compelling. SOT is still in development, but look for market visibility to begin around 2024","PeriodicalId":246531,"journal":{"name":"2021 IEEE Hot Chips 33 Symposium (HCS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"SOT-MRAM – Third generation MRAM memory opens new opportunities : Hot Chips Conference August 2021\",\"authors\":\"Barry A. Hoberman, J. Nozieres\",\"doi\":\"10.1109/HCS52781.2021.9567072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SOT is a straightforward extension of today’s ‘in production’ MRAM technologies running in major foundries. First memory technology to genuinely have the capability to converge both SRAM and NVM characteristics in advanced CMOS nodes $( \\\\le 28$ nm). Power, cost, and performance benefits of SOT are compelling. SOT is still in development, but look for market visibility to begin around 2024\",\"PeriodicalId\":246531,\"journal\":{\"name\":\"2021 IEEE Hot Chips 33 Symposium (HCS)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Hot Chips 33 Symposium (HCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HCS52781.2021.9567072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Hot Chips 33 Symposium (HCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HCS52781.2021.9567072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SOT-MRAM – Third generation MRAM memory opens new opportunities : Hot Chips Conference August 2021
SOT is a straightforward extension of today’s ‘in production’ MRAM technologies running in major foundries. First memory technology to genuinely have the capability to converge both SRAM and NVM characteristics in advanced CMOS nodes $( \le 28$ nm). Power, cost, and performance benefits of SOT are compelling. SOT is still in development, but look for market visibility to begin around 2024
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