研究了功率二极管和晶体管功率损耗建模的准确性

V. Nerubatskyi, O. A. Plakhtii, D. Hordiienko, H. Khoruzhevskyi, Maryna Vitaliyivna Philipjeva
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引用次数: 0

摘要

给出了在Matlab和Multisim软件环境下对功率IGBT和MOSFET晶体管的静态和动态功率损耗进行建模的方法。结果表明,在对功率晶体管中的开关过程进行建模时,Matlab / Simulink不允许确定功率损耗的动态分量,即晶体管导通能量、晶体管关断能量以及功率二极管的恢复能量。同时,在Matlab/Simulink中对功率二极管和晶体管的静态功率损耗进行了仿真,由于电流-电压特性表示不正确,误差较大。结果表明,为了更准确、准确地模拟功率晶体管的工作,包括功率开关的功率损耗,在Multisim软件环境中进行仿真更为合适,仿真过程中考虑了温度特性、寄生输入输出电容和电感、电流电压特性的非线性等47个参数。在Multisim中,开发了一种由IR2104PBF驱动器控制的功率mosfet半桥逆变电路。结果表明,驱动微电路的参数,即驱动器存储电容的大小,以及栅极电阻的有源电阻的值,对功率晶体管的开关有显著的影响。结果表明,在Multisim中的仿真能够正确地显示功率晶体管的通断和二极管的反向恢复的瞬态过程,从而可以确定功率晶体管和功率二极管的动态损耗。
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RESEARCH THE ACCURACY OF MODELING POWER LOSSES IN POWER DIODES AND TRANSISTORS
The methodology for modeling static and dynamic power losses in power IGBT and MOSFET transistors in the Matlab and Multisim software environments is given. It is shown that when modeling switching processes in power transistors, Matlab / Simulink does not allow determining the dynamic components of power losses, namely, the energy of turning on the transistor, the energy of turning off the transistor, as well as the recovery energy of power diodes. At the same time, the simulation of static power losses of power diodes and transistors in Matlab/Simulink is carried out with a significant error due to incorrect representation of the current-voltage characteristics. It is shown that for a more correct and accurate simulation of the operation of power transistors, including power losses in power switches, it is more appropriate to conduct simulations in the Multisim software environment, which takes into account more than 47 parameters during simulation, including temperature characteristics, parasitic input and output capacitances and inductances, nonlinearities of current-voltage characteristics and others. In Multisim, a circuit of a half-bridge inverter with power MOSFETs controlled by the IR2104PBF driver has been developed. It is shown that the switching of power transistors is significantly influenced by the parameters of the driver microcircuit, namely the size of the storage capacitor of the driver, as well as the value of the active resistance of the gate resistor. It is shown that the simulation in Multisim correctly displays the transient processes of turning on and off power transistors and reverse recovery of diodes, which allows determining the dynamic losses of power transistors and power diodes.
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