{"title":"双极电路仿真的热参数提取","authors":"D. T. Zweidinger, R. Fox, S. Lee, T. Jung","doi":"10.1109/BIPOL.1995.493871","DOIUrl":null,"url":null,"abstract":"A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating. The method allows extraction at high currents where simple models fail. Results can also be used to extract thermal impedance to model self-heating in suitably modified circuit simulators.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Extraction of thermal parameters for bipolar circuit simulation\",\"authors\":\"D. T. Zweidinger, R. Fox, S. Lee, T. Jung\",\"doi\":\"10.1109/BIPOL.1995.493871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating. The method allows extraction at high currents where simple models fail. Results can also be used to extract thermal impedance to model self-heating in suitably modified circuit simulators.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extraction of thermal parameters for bipolar circuit simulation
A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating. The method allows extraction at high currents where simple models fail. Results can also be used to extract thermal impedance to model self-heating in suitably modified circuit simulators.