单绕组磁控并联电抗器的双模型

Romualds Bogdanovics, M. Makarova
{"title":"单绕组磁控并联电抗器的双模型","authors":"Romualds Bogdanovics, M. Makarova","doi":"10.1109/AIEEE.2014.7020324","DOIUrl":null,"url":null,"abstract":"This paper present one-winding Magnetically Controlled Shunt Reactors (MCSR) dual model. Principles of the MCSR dual scheme creation as thyristor-controlled reactor are explained. Modeling MCSR and its dual model is done. Results of modeling are compared and harmonical analyses are done.","PeriodicalId":117147,"journal":{"name":"2014 IEEE 2nd Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Dual model of single-winding magnetically Controlled Shunt Reactor\",\"authors\":\"Romualds Bogdanovics, M. Makarova\",\"doi\":\"10.1109/AIEEE.2014.7020324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper present one-winding Magnetically Controlled Shunt Reactors (MCSR) dual model. Principles of the MCSR dual scheme creation as thyristor-controlled reactor are explained. Modeling MCSR and its dual model is done. Results of modeling are compared and harmonical analyses are done.\",\"PeriodicalId\":117147,\"journal\":{\"name\":\"2014 IEEE 2nd Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AIEEE.2014.7020324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AIEEE.2014.7020324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

提出了单绕组磁控并联电抗器(MCSR)的双模型。阐述了晶闸管控制电抗器的MCSR双方案创建原理。对MCSR及其双模型进行了建模。对建模结果进行了比较,并进行了谐波分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Dual model of single-winding magnetically Controlled Shunt Reactor
This paper present one-winding Magnetically Controlled Shunt Reactors (MCSR) dual model. Principles of the MCSR dual scheme creation as thyristor-controlled reactor are explained. Modeling MCSR and its dual model is done. Results of modeling are compared and harmonical analyses are done.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Concept of virtual machine based high resolution display wall Modelling of the MRI perfusion process of human head Virtual energy simulation of induction traction drive test bench Inter-path interference cancelation in wireless ad-hoc networks using smart antennas Development and optimization of adjustable vibration source for investigation of prosthesis-to-human feedback of intellectual artificial limb
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1