{"title":"石墨FinFET的分析","authors":"R. P. Maurya, Nayanica Srivastava, S. Mitra","doi":"10.1109/incet49848.2020.9154179","DOIUrl":null,"url":null,"abstract":"This paper proposed a bulk Si-FinFET for different digital applications. The proposed device has been analyzed for different gate dielectric material such as SiO2 as low-K dielectric and HfO2 as high-K dielectric. It is observed that by using high-K dielectric, ON Current is slightly enhanced. Further the comparative study of a device for silicon material and graphite material is also performed. It is observed that when body thickness is 12 nm, the ON Current of the device is high for Silicon at higher gate voltage as compared to graphite.","PeriodicalId":174411,"journal":{"name":"2020 International Conference for Emerging Technology (INCET)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Graphite FinFET\",\"authors\":\"R. P. Maurya, Nayanica Srivastava, S. Mitra\",\"doi\":\"10.1109/incet49848.2020.9154179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposed a bulk Si-FinFET for different digital applications. The proposed device has been analyzed for different gate dielectric material such as SiO2 as low-K dielectric and HfO2 as high-K dielectric. It is observed that by using high-K dielectric, ON Current is slightly enhanced. Further the comparative study of a device for silicon material and graphite material is also performed. It is observed that when body thickness is 12 nm, the ON Current of the device is high for Silicon at higher gate voltage as compared to graphite.\",\"PeriodicalId\":174411,\"journal\":{\"name\":\"2020 International Conference for Emerging Technology (INCET)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference for Emerging Technology (INCET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/incet49848.2020.9154179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference for Emerging Technology (INCET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/incet49848.2020.9154179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper proposed a bulk Si-FinFET for different digital applications. The proposed device has been analyzed for different gate dielectric material such as SiO2 as low-K dielectric and HfO2 as high-K dielectric. It is observed that by using high-K dielectric, ON Current is slightly enhanced. Further the comparative study of a device for silicon material and graphite material is also performed. It is observed that when body thickness is 12 nm, the ON Current of the device is high for Silicon at higher gate voltage as compared to graphite.
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