{"title":"具有增益增强的90纳米双带CMOS LNA用于无线局域网应用","authors":"Siddharth Shukla, Arun Kumar Pandey, Sumit Kumar, A. Hamza, Gaurav Mehra","doi":"10.1109/ICEEICT53079.2022.9768493","DOIUrl":null,"url":null,"abstract":"A 90-nm dual-band high gain CMOS LNA has been proposed. The first stage consists of twin band pass filter which is used to achieve dual bands at 2.4 and 5.2 GHz. High gain is achieved using current starving technique. A buffer stage is used to isolate input-output signals. The two stage LNA delivers a power gain of 20.577 dB and 20.360 dB at 2.4 and 5.2 GHz respectively with a gain deviation of 0.217 dB. The noise figure is observed to be 2.129 dB and 3.177 dB by using a parallel LC input matching network. The proposed LNA operates at a supply voltage of 1.2 V with a power dissipation of 7.32 mW.","PeriodicalId":201910,"journal":{"name":"2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"90-nm Dual-Band CMOS LNA with Gain Enhancement for Wireless LAN Applications\",\"authors\":\"Siddharth Shukla, Arun Kumar Pandey, Sumit Kumar, A. Hamza, Gaurav Mehra\",\"doi\":\"10.1109/ICEEICT53079.2022.9768493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 90-nm dual-band high gain CMOS LNA has been proposed. The first stage consists of twin band pass filter which is used to achieve dual bands at 2.4 and 5.2 GHz. High gain is achieved using current starving technique. A buffer stage is used to isolate input-output signals. The two stage LNA delivers a power gain of 20.577 dB and 20.360 dB at 2.4 and 5.2 GHz respectively with a gain deviation of 0.217 dB. The noise figure is observed to be 2.129 dB and 3.177 dB by using a parallel LC input matching network. The proposed LNA operates at a supply voltage of 1.2 V with a power dissipation of 7.32 mW.\",\"PeriodicalId\":201910,\"journal\":{\"name\":\"2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEEICT53079.2022.9768493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEICT53079.2022.9768493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
90-nm Dual-Band CMOS LNA with Gain Enhancement for Wireless LAN Applications
A 90-nm dual-band high gain CMOS LNA has been proposed. The first stage consists of twin band pass filter which is used to achieve dual bands at 2.4 and 5.2 GHz. High gain is achieved using current starving technique. A buffer stage is used to isolate input-output signals. The two stage LNA delivers a power gain of 20.577 dB and 20.360 dB at 2.4 and 5.2 GHz respectively with a gain deviation of 0.217 dB. The noise figure is observed to be 2.129 dB and 3.177 dB by using a parallel LC input matching network. The proposed LNA operates at a supply voltage of 1.2 V with a power dissipation of 7.32 mW.
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