Performance Comparison of Thin-Film Transistors Fabricated Using Different Purity Semiconducting Nanotubes

In this paper, fabrication and characterization of semi conducting nanotube thin-film transistors (SN-TFTs) using 90% and 95% purity semi conducting single walled carbon nanotubes (SWCNTs) are presented. The wafer scale fabrication of SN-TFTs are carried out on 2 inch Si wafers. Pre-separated semi conducting SWCNTs are deposited on amino-silane treated Si/SiO2 surface. A simple method is suggested for silanization in order to improve the carbon nanotube density more than 30 nanotubes/¹m2. SN-TFTs fabricated using both 90% and 95% enriched semi conducting SWCNTs have exhibited p-type output characteristic with excellent linear and saturation region of operation along with high on-off current ratio and steep sub threshold slope.