基于CMOS和CNTFET的置乱三元算子设计与分析

Gudala Konica, Sreenivasulu Mamilla
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引用次数: 0

摘要

随着硅技术规模的缩小,高性能数字电路是一个主要的选择。碳纳米管场效应晶体管(cntfet)由于其优异的电流驱动能力,被认为是最有前途的技术,并被证明是传统CMOS技术的替代品。提出了一种基于CNTFET的高能效三元算子。采用Synopsys HSPICE,在0.9 V电源电压下,采用32 nm CMOS和CNTFET模拟了置乱算子1 (SOP1)、置乱算子2 (SOP2)和SUM算子的晶体管级实现。测量了功率、延迟和功率延迟积(PDP)等性能指标,并对CNTFET和CMOS技术进行了比较分析。结果表明,CNTFET设计在功率,能耗和减少晶体管数量方面具有更好的优化结果。
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Design and Analysis of CMOS and CNTFET based Ternary Operators for Scrambling
As silicon technology scales down, it is a dominant choice to have high-performance digital circuits. As researchers investigated for high-performance digital circuits for future generations, Carbon Nanotube Field Effect Transistors (CNTFETs) is considered as the most promising technology due to their excellent current driving capability and proved to be an alternative to conventional CMOS technology. A CNTFET based energy efficient ternary operators are proposed for scrambling applications. The transistor-level implementations of operators namely Scrambling Operator1 (SOP1), Scrambling Operator2 (SOP2) and SUM operators are simulated with CMOS and CNTFET in 32 nm technology at 0.9 V supply voltage using Synopsys HSPICE. The performance metrics like Power, Delay and Power-delay product (PDP) are measured and a comparative analysis for CNTFET and CMOS technologies is carried out. The results demonstrate that CNTFET designs have better-optimized results in power, energy consumption, and reduced transistor count.
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