无驱动40gb /s LiNbO/sub 3/调制器，驱动电压低于1v

Optical Fiber Communication Conference and Exhibit Pub Date : 2002-03-17 DOI:10.1109/OFC.2002.1036766

M. Sugiyama, M. Doi, S. Taniguchi, T. Nakazawa, H. Onaka

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引用次数: 29

摘要

我们成功地将40Gb/s LiNbO/sub 3/调制器的驱动电压降低到0.9 V，这是目前世界上40Gb/s LiNbO/sub 3/调制器的最低驱动电压。该调制器可以在SiGe晶体管的击穿电压范围内驱动。这一结果是通过一种新的设计概念实现的，该设计概念具有宽间隙，长CPW(共面波导)电极。

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Driver-less 40 Gb/s LiNbO/sub 3/ modulator with sub-1 V drive voltage

We have succeeded in reducing the drive voltage of a 40Gb/s LiNbO/sub 3/ modulator to 0.9 V, which is the lowest-drive-voltage 40Gb/s LiNbO/sub 3/ modulator in the world. The modulator can be driven within the break down voltage of a SiGe transistor. This result was achieved using a new design concept that featured a wide-gap, long CPW (coplanar waveguide) electrode.

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Optical Fiber Communication Conference and Exhibit

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