{"title":"射频磁控溅射ZnO:Al薄膜的退火工艺","authors":"Yu Zhi-nong, Xu Jin, Xue Wei, L. Jinwei","doi":"10.1109/AOE.2007.4410872","DOIUrl":null,"url":null,"abstract":"The ZnO:AI films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Omegaldrcm was obtained in the condition of vacuum annealing at 220degC.","PeriodicalId":370885,"journal":{"name":"2007 Asia Optical Fiber Communication and Optoelectronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The annealing process of R.F. magnetron sputtered ZnO:Al films\",\"authors\":\"Yu Zhi-nong, Xu Jin, Xue Wei, L. Jinwei\",\"doi\":\"10.1109/AOE.2007.4410872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ZnO:AI films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Omegaldrcm was obtained in the condition of vacuum annealing at 220degC.\",\"PeriodicalId\":370885,\"journal\":{\"name\":\"2007 Asia Optical Fiber Communication and Optoelectronics Conference\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Asia Optical Fiber Communication and Optoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AOE.2007.4410872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Asia Optical Fiber Communication and Optoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOE.2007.4410872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The annealing process of R.F. magnetron sputtered ZnO:Al films
The ZnO:AI films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Omegaldrcm was obtained in the condition of vacuum annealing at 220degC.
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