Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review

Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.