{"title":"碲合金薄膜的双态开孔工艺","authors":"M. Chen, V. Marrello, U. G. Gerber","doi":"10.1364/ods.1983.wa2","DOIUrl":null,"url":null,"abstract":"Single layer (≃ 300A thick) Te and Te-alloy films on polymethylmethacrylate substrates are widely studied for possible use as optical recording media. The ablative hole formation process in such media is however still poorly understood. In this paper, data is presented to show that ablative writing in Te-alloy films has two hole opening regimes. This two regime hole opening process is shown to lead to a qualitative understanding of the contrast ratio versus writing laser power characteristics of Te-alloy films.","PeriodicalId":268493,"journal":{"name":"Topical Meeting on Optical Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-Regime Hole Opening Process in Tellurium-Alloy Films\",\"authors\":\"M. Chen, V. Marrello, U. G. Gerber\",\"doi\":\"10.1364/ods.1983.wa2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single layer (≃ 300A thick) Te and Te-alloy films on polymethylmethacrylate substrates are widely studied for possible use as optical recording media. The ablative hole formation process in such media is however still poorly understood. In this paper, data is presented to show that ablative writing in Te-alloy films has two hole opening regimes. This two regime hole opening process is shown to lead to a qualitative understanding of the contrast ratio versus writing laser power characteristics of Te-alloy films.\",\"PeriodicalId\":268493,\"journal\":{\"name\":\"Topical Meeting on Optical Data Storage\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Topical Meeting on Optical Data Storage\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/ods.1983.wa2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Topical Meeting on Optical Data Storage","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/ods.1983.wa2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-Regime Hole Opening Process in Tellurium-Alloy Films
Single layer (≃ 300A thick) Te and Te-alloy films on polymethylmethacrylate substrates are widely studied for possible use as optical recording media. The ablative hole formation process in such media is however still poorly understood. In this paper, data is presented to show that ablative writing in Te-alloy films has two hole opening regimes. This two regime hole opening process is shown to lead to a qualitative understanding of the contrast ratio versus writing laser power characteristics of Te-alloy films.
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