用EXAFS和SAXS测定锗纳米晶的性质

L. Araujo, R. Giulian, P. Kluth, B. Johannessen, D. Cookson, G. Foran, M. Ridgway
{"title":"用EXAFS和SAXS测定锗纳米晶的性质","authors":"L. Araujo, R. Giulian, P. Kluth, B. Johannessen, D. Cookson, G. Foran, M. Ridgway","doi":"10.1142/S1793617908000227","DOIUrl":null,"url":null,"abstract":"We report on the atomic level structural properties of Ge nanocrystals (Ge NCs) grown by ion implantation and thermal annealing. The synchrotron-based techniques of extended X-ray absorption fine structure (EXAFS) spectroscopy and small angle X-ray scattering (SAXS) were applied to characterize the Ge NCs. Four different size distributions of Ge NCs were produced in amorphous SiO2 matrices, with mean diameters ranging from 4.0 to 9.0 nm as verified by SAXS measurements. The decrease in size, or increase in surface-to-volume ratio, for the NCs leads to a decrease in the crystalline-like features in the X-ray absorption near-edge structure (XANES) and EXAFS regions of the X-ray absorption spectra. It also yields a decrease in coordination number and an increase in mean interatomic distance, structural disorder, and asymmetry of the interatomic distance distribution. By comparison with bulk standards, the NCs are described as a combination of crystalline Ge core and surrounding amorphous Ge-like surface layer.","PeriodicalId":166807,"journal":{"name":"Advances in Synchrotron Radiation","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"PROPERTIES OF Ge NANOCRYSTALS DETERMINED BY EXAFS AND SAXS\",\"authors\":\"L. Araujo, R. Giulian, P. Kluth, B. Johannessen, D. Cookson, G. Foran, M. Ridgway\",\"doi\":\"10.1142/S1793617908000227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the atomic level structural properties of Ge nanocrystals (Ge NCs) grown by ion implantation and thermal annealing. The synchrotron-based techniques of extended X-ray absorption fine structure (EXAFS) spectroscopy and small angle X-ray scattering (SAXS) were applied to characterize the Ge NCs. Four different size distributions of Ge NCs were produced in amorphous SiO2 matrices, with mean diameters ranging from 4.0 to 9.0 nm as verified by SAXS measurements. The decrease in size, or increase in surface-to-volume ratio, for the NCs leads to a decrease in the crystalline-like features in the X-ray absorption near-edge structure (XANES) and EXAFS regions of the X-ray absorption spectra. It also yields a decrease in coordination number and an increase in mean interatomic distance, structural disorder, and asymmetry of the interatomic distance distribution. By comparison with bulk standards, the NCs are described as a combination of crystalline Ge core and surrounding amorphous Ge-like surface layer.\",\"PeriodicalId\":166807,\"journal\":{\"name\":\"Advances in Synchrotron Radiation\",\"volume\":\"142 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Synchrotron Radiation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S1793617908000227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Synchrotron Radiation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S1793617908000227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文报道了离子注入和热退火法制备的锗纳米晶体的原子级结构特性。采用同步加速器扩展x射线吸收精细结构(EXAFS)光谱和小角x射线散射(SAXS)技术对锗纳米粒子进行了表征。在无定形SiO2基体中制备了四种不同尺寸分布的Ge NCs,经SAXS测量证实,其平均直径在4.0 ~ 9.0 nm之间。纳米颗粒尺寸的减小或表面体积比的增加导致x射线吸收光谱近边结构(XANES)和EXAFS区域的类晶特征减少。配位数减少,平均原子间距离增加,结构紊乱,原子间距离分布不对称。与体标准相比,nc被描述为结晶Ge芯和周围非晶类Ge表面层的组合。
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PROPERTIES OF Ge NANOCRYSTALS DETERMINED BY EXAFS AND SAXS
We report on the atomic level structural properties of Ge nanocrystals (Ge NCs) grown by ion implantation and thermal annealing. The synchrotron-based techniques of extended X-ray absorption fine structure (EXAFS) spectroscopy and small angle X-ray scattering (SAXS) were applied to characterize the Ge NCs. Four different size distributions of Ge NCs were produced in amorphous SiO2 matrices, with mean diameters ranging from 4.0 to 9.0 nm as verified by SAXS measurements. The decrease in size, or increase in surface-to-volume ratio, for the NCs leads to a decrease in the crystalline-like features in the X-ray absorption near-edge structure (XANES) and EXAFS regions of the X-ray absorption spectra. It also yields a decrease in coordination number and an increase in mean interatomic distance, structural disorder, and asymmetry of the interatomic distance distribution. By comparison with bulk standards, the NCs are described as a combination of crystalline Ge core and surrounding amorphous Ge-like surface layer.
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