一种温度系数为15.1ppm/0C的28nm CMOS电流模带隙基准

R. Nagulapalli, Immanuel Raja
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引用次数: 6

摘要

传统的Sub-1V带隙参考电路不提供PTAT电流,它有几个稳定的工作点。本文对存在的问题进行了直观的解释。提出了一种改进的sub-1V参考电路,将PTAT电流注入BJT和电位分压器。此外,剩余的系统偏移量也是温度系数的主要贡献者之一。在这项工作中,提出了一种新的基于电流镜的自偏置opamp,它将系统偏移最小化了36%以上。开发了28nm的原型,并进行了布局后的仿真。最小VDD为1V,同时提供450mV参考电压,线稳压为1.2%。在-40至1250C的工业范围内,温度系数为15.1ppm/0C。该电路在高温下耗电25uA,硅面积1192um2。
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A Modified Current Mode Bandgap Reference with 15.1ppm/0C Temp Coefficient in 28nm CMOS
Conventional Sub-1V bandgap reference circuit does not provide PTAT current and it has several stable operating points. All of the existing problems are explained intuitively in this paper. A modified sub-1V reference circuit was proposed, by injecting the PTAT current into a BJT and potential divider. Also, residual systematic offset is one of the major temperature coefficient contributor. In this work a novel currentmirror based self-biased opamp has been proposed which minimized the systematic offset by more 36%. A prototype has been developed in 28nm and post-layout simulations are presented. The minimum VDD is 1V while providing 450mV reference voltage with a line regulation of 1.2%. A temperature coefficient of 15.1ppm/0C has been achieved over the industrial range of -40 to 1250C. The circuit draws 25uA at high temperature and occupies 1192um2 silicon area.
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