{"title":"一个简单和紧凑的跨阻模式直流桥式读出器","authors":"S. Buakaew, W. Narksarp, C. Wongtaychatham","doi":"10.1109/ICEAST52143.2021.9426268","DOIUrl":null,"url":null,"abstract":"This paper presents a new circuit configuration of a transimpedance mode dc bridge based on an operational trans-resistance amplifier (OTRA) as an analog building block. The proposed circuit suits for small changing resistance detector. By taking the benefit of grounding property at the internal input port of the OTRA, a simple and compact dc bridge is obtained. The proposed circuit is composed of two sensing components together with a feedback resistor and only one operational trans-resistance amplifier. The circuit performances are verified by the PSPICE simulation using 0.35 $\\mu$m CMOS technology model parameters. The simulation results from circuit level agree well with the theoretical values.","PeriodicalId":416531,"journal":{"name":"2021 7th International Conference on Engineering, Applied Sciences and Technology (ICEAST)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Simple and Compact Transimpedance Mode dc Bridge Readout\",\"authors\":\"S. Buakaew, W. Narksarp, C. Wongtaychatham\",\"doi\":\"10.1109/ICEAST52143.2021.9426268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new circuit configuration of a transimpedance mode dc bridge based on an operational trans-resistance amplifier (OTRA) as an analog building block. The proposed circuit suits for small changing resistance detector. By taking the benefit of grounding property at the internal input port of the OTRA, a simple and compact dc bridge is obtained. The proposed circuit is composed of two sensing components together with a feedback resistor and only one operational trans-resistance amplifier. The circuit performances are verified by the PSPICE simulation using 0.35 $\\\\mu$m CMOS technology model parameters. The simulation results from circuit level agree well with the theoretical values.\",\"PeriodicalId\":416531,\"journal\":{\"name\":\"2021 7th International Conference on Engineering, Applied Sciences and Technology (ICEAST)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 7th International Conference on Engineering, Applied Sciences and Technology (ICEAST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEAST52143.2021.9426268\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Conference on Engineering, Applied Sciences and Technology (ICEAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEAST52143.2021.9426268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Simple and Compact Transimpedance Mode dc Bridge Readout
This paper presents a new circuit configuration of a transimpedance mode dc bridge based on an operational trans-resistance amplifier (OTRA) as an analog building block. The proposed circuit suits for small changing resistance detector. By taking the benefit of grounding property at the internal input port of the OTRA, a simple and compact dc bridge is obtained. The proposed circuit is composed of two sensing components together with a feedback resistor and only one operational trans-resistance amplifier. The circuit performances are verified by the PSPICE simulation using 0.35 $\mu$m CMOS technology model parameters. The simulation results from circuit level agree well with the theoretical values.
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