J. Kudoh, Toshiro Takahashi, Yukio Umada, M. Kimura, Shigeru Yamamoto, Y. Ito
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引用次数: 5
摘要
采用0.5 /spl μ m CMOS三金属层工艺技术，研制出了具有新型GTL I/O电路的530 kG栅极阵列。推挽输出驱动器和动态终端接收器的I/O电路可以通过连接到终端总线的长stub线传输250 Mb/s的数据。差分接收机的IDDQ可测试性设计没有任何延迟时间开销。
A CMOS gate array with dynamic-termination GTL I/O circuits
A 530 kG gate array with novel GTL I/O circuits has been developed using 0.5 /spl mu/m CMOS triple-metal-layer process technology. The I/O circuit of a push-pull output driver and a dynamic termination receiver can transmit 250 Mb/s data through a long stub line which is connected to a terminated bus line. IDDQ testability is designed for the differential receiver without any delay time overheads.
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