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摘要

本文报道了重费米子反铁磁体(tn = 3.8 K) CeRhIn 5单晶温度相关的各向异性电阻率和面内磁阻的测量。在1.4 K至300 K的温度范围和18特斯拉的磁场范围内进行了测量。电阻率具有中等的各向异性,室温c轴面内电阻率比ρ c / ρ a (300 K) = 1.7。对非磁性模拟物LaRhIn 5的ρ (T)测量表明,CeRhIn 5电阻率的各向异性主要来自于kondo衍生磁散射的各向异性。在磁有序状态下,由于小的有序矩(0.37µB)和磁各向异性,外加磁场H仅略微降低了tn。在顺磁状态下,低于7.5 K的磁电阻为正,随h线性变化,而在较高温度下,高场磁电阻为负。正贡献随温度升高而减小。在40k以上,正贡献不再可见,MR为负。低t正MR来自与近藤相干态的相互作用,而高t负MR来自单一杂质效应。H和t相关的磁输运反映了CeRhIn 5的磁各向异性和近藤相互作用。
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5
We report measurements of the temperature-dependent anisotropic resistivity and in-plane magnetoresistance on single crystals of the tetragonal heavy-fermion antiferromagnet (T N = 3.8 K) CeRhIn 5 . The measurements are reported in the temperature range 1.4 K to 300 K and in magnetic fields to 18 tesla. The resistivity is moderately anisotropic, with a room-temperature c-axis to in-plane resistivity ratio ρ c / ρ a (300 K) = 1.7. ρ (T) measurements on the non-magnetic analog LaRhIn 5 indicate that the anisotropy in the CeRhIn 5 resistivity stems predominately from anisotropy in Kondo-derived magnetic scattering. In the magnetically ordered regime an applied field H reduces T N only slightly due to the small ordered moment (0.37 µ B ) and magnetic anisotropy. The magnetoresistance (MR) below T N is positive and varies linearly with H. In the paramagnetic state a positive MR is present below 7.5 K, while a high-field negative contribution is evident at higher temperatures. The positive contribution decreases in magnitude with increasing temperature. Above 40 K the positive contribution is no longer observable, and the MR is negative. The low-T positive MR results from interactions with the Kondo-coherent state, while the high-T negative MR stems from single-impurity effects. The H and T-dependent magnetotransport reflects the magnetic anisotropy and Kondo interactions at play in CeRhIn 5 .
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