技术节点缩放对nMOS SPDT射频开关的影响

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772307

T. Thrivikraman, W. Kuo, J. Comeau, J. Cressler

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引用次数: 10

摘要

本研究比较了三种单极双掷(SPDT) nMOS射频开关在商用的基于硅的180、130和90纳米技术中实现的情况。此外，还提出了一种新型串联并联开关，为提高开关的隔离性提供了一种手段。这些RF开关的测量结果展示了技术节点缩放如何影响RF开关设计，并提供了对插入损耗、隔离和线性之间复杂权衡的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Impact of Technology Node Scaling on nMOS SPDT RF Switches

This work presents a comparison of three single-pole double-throw (SPDT) nMOS RF switches implemented in commercially available Si-based 180, 130, and 90 nm technologies. In addition, a new series-shunt switch is presented that offers a means to improve switch isolation. Measured results of these RF switches demonstrates how technology node scaling impacts RF switch design and provides insight into the complicated trade-offs between insertion loss, isolation, and linearity.

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2008 European Microwave Integrated Circuit Conference

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