偶极子修正和自旋轨道耦合对二硫化钨单层的影响:硅第一性原理研究

K. O. Obodo, C. Ouma, G. Gebreyesus, J. T. Obodo, M. Braun
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引用次数: 6

摘要

用第一性原理计算方法研究了二卤钨化合物(WS2、WSe2、WTe2)的结构和电子性质。我们发现结构和电子性质随偶极子修正和自旋轨道耦合(SOC)的变化而变化。将计算结果与实验值进行比较,我们发现在这些二维材料中单独引入SOC严重低估了电子带隙。加入自一致偶极子校正后,这些二卤钨化合物的电子带隙增大。因此,在这些二维WX2材料中发现偶极子修正的影响是显著的。SOC与这些材料无关,在应用这些偶极子修正时应注意
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Effect of Dipole Corrections and Spin Orbit Coupling on Tungsten Dichalcogenides Monolayer: A in Silico First Principles Study
The structural and electronic properties of tungsten dichalogenides compounds (WS2, WSe2, WTe2) were investigated from first principles calculations. We found that the structural and electronic properties changed both as a function of the dipole corrections and spin-orbit coupling (SOC). Comparing the calculated results with experimental values, we found that introducing SOC by itself in these 2D materials grossly underestimates the electronic band gap. Adding the self-consistent dipole correction results in larger electronic band gap for these tungsten dichalogenide compounds. Thus, the influence of dipole corrections in these 2D WX2 materials was found to be significant. The SOC are not relevant for these materials and care should be taken on application of these dipole corrections
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