纳米功率CMOS电压参考电路,从0°C到150°C,无电阻,16 ppm/°C

Zhi Yang, Mei Jiang
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引用次数: 2

摘要

本文提出了一种平均电压为281mV的基准电压电路。所有晶体管均偏置在弱反转区,仿真中采用0.18um混合信号处理。本设计基于两个器件之间的加权不同阈值电压,在室温下1V电压下的超低功耗为1.5nW。此外,电压温度系数在best@1V低至16 ppm/°C,在0°C至150°C范围内平均为40 ppm/°C。所提出的电压电路的电源电压范围为0.65 ~ 5v,电源抑制比(PSRR)为-54dB@100Hz。电路有源面积为0.0013 mm2。
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Nanopower CMOS voltage reference circuit with 16 ppm/°C from 0°C to 150°C without resistors
A voltage reference circuit providing a mean voltage of 281mV is proposed in this work. All transistors are biased in weak inversion region, and the 0.18um mix signal process is used in the simulation. This design is based on the weighted different threshold voltage between two devices, which has ultra low-power consumption of 1.5nW on 1V at room temperature. Besides, the temperature coefficient of voltage is as low as 16 ppm/°C at best@1V and 40 ppm/°C on average in a range from 0°C to 150 °C. The supply voltage of the proposed voltage circuit is from 0.65 to 5 V, and the power supply rejection ratio (PSRR) is -54dB@100Hz. The active area of circuit is 0.0013 mm2.
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