{"title":"单晶硅中隐藏铅酸盐层的离子束合成","authors":"E. Yu. Buchin, Yu. I. Denisenko","doi":"10.1134/S1087659623600564","DOIUrl":null,"url":null,"abstract":"<p>The features of the formation of a hidden lead-silicate insulating layer in silicon substrates are considered. To do this, ions of molecular oxygen and lead are sequentially implanted into them in an atomic ratio of 75 : 1 then annealing is carried out at a temperature of 1150°C in an environment of dry oxygen. The distribution of the implanted ions in the experimental samples is recorded by the method of secondary ion mass spectrometry. It is shown that the latent insulator is formed in the process of the spinodal decomposition of a solid solution of SiO<sub><i>x</i></sub>–PbO<sub><i>x</i></sub> in the form of a three-layer structure. Its middle part is silicon dioxide doped with lead ions and the side parts consist of a lead-silicate phase. A relaxation diffusion model is proposed to analyze the distribution profile of lead.</p>","PeriodicalId":580,"journal":{"name":"Glass Physics and Chemistry","volume":"49 5","pages":"535 - 537"},"PeriodicalIF":0.8000,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ion-Beam Synthesis of a Hidden Lead-Silicate Layer in Single-Crystal Silicon\",\"authors\":\"E. Yu. Buchin, Yu. I. Denisenko\",\"doi\":\"10.1134/S1087659623600564\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The features of the formation of a hidden lead-silicate insulating layer in silicon substrates are considered. To do this, ions of molecular oxygen and lead are sequentially implanted into them in an atomic ratio of 75 : 1 then annealing is carried out at a temperature of 1150°C in an environment of dry oxygen. The distribution of the implanted ions in the experimental samples is recorded by the method of secondary ion mass spectrometry. It is shown that the latent insulator is formed in the process of the spinodal decomposition of a solid solution of SiO<sub><i>x</i></sub>–PbO<sub><i>x</i></sub> in the form of a three-layer structure. Its middle part is silicon dioxide doped with lead ions and the side parts consist of a lead-silicate phase. A relaxation diffusion model is proposed to analyze the distribution profile of lead.</p>\",\"PeriodicalId\":580,\"journal\":{\"name\":\"Glass Physics and Chemistry\",\"volume\":\"49 5\",\"pages\":\"535 - 537\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2023-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Glass Physics and Chemistry\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1087659623600564\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Glass Physics and Chemistry","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1087659623600564","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
Ion-Beam Synthesis of a Hidden Lead-Silicate Layer in Single-Crystal Silicon
The features of the formation of a hidden lead-silicate insulating layer in silicon substrates are considered. To do this, ions of molecular oxygen and lead are sequentially implanted into them in an atomic ratio of 75 : 1 then annealing is carried out at a temperature of 1150°C in an environment of dry oxygen. The distribution of the implanted ions in the experimental samples is recorded by the method of secondary ion mass spectrometry. It is shown that the latent insulator is formed in the process of the spinodal decomposition of a solid solution of SiOx–PbOx in the form of a three-layer structure. Its middle part is silicon dioxide doped with lead ions and the side parts consist of a lead-silicate phase. A relaxation diffusion model is proposed to analyze the distribution profile of lead.
期刊介绍：
Glass Physics and Chemistry presents results of research on the inorganic and physical chemistry of glass, ceramics, nanoparticles, nanocomposites, and high-temperature oxides and coatings. The journal welcomes manuscripts from all countries in the English or Russian language.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
