Emina Pozega, Slavko Bernik, Sasa Marjanovic, Ana Petrovic, Igor Svrkota, Andjela Stojic, Danijela Simonovic
{"title":"Bridgman法制备Bi2Te2.88Se0.12块状单晶的研究","authors":"Emina Pozega, Slavko Bernik, Sasa Marjanovic, Ana Petrovic, Igor Svrkota, Andjela Stojic, Danijela Simonovic","doi":"10.2298/sos231017056p","DOIUrl":null,"url":null,"abstract":"As part of research on the influence of selenium as dopant on bismuth telluride, a successful synthesis of single crystal was carried out. Single crystal of p type conductivity, with the given compound formula, Bi2Te2.88Se0.12, was obtained by the Bridgman process. The obtained empirical formula does not deviate from the given compound formula. Single crystal was characterized by Hall Effect system based on the Van der Pauw method. Also, bulk sample was characterized by Seebeck coefficient (S), thermal conductivity (?) and electrical resistivity (?) measurements, as ? function of temperature in the range of 40 - 320?C by ? home made impedance meter. The prepared single crystal has a figure of merit (Z) of 2.16 x 10-3 K-1 at 40?C. Values of ZT are about 1.0 at 27?C for commercialized p and n type of bismuth telluride ingots. T is absolute temperature.","PeriodicalId":21592,"journal":{"name":"Science of Sintering","volume":"8 1","pages":"0"},"PeriodicalIF":1.4000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Bi2Te2.88Se0.12 bulk single crystal produced using Bridgman method\",\"authors\":\"Emina Pozega, Slavko Bernik, Sasa Marjanovic, Ana Petrovic, Igor Svrkota, Andjela Stojic, Danijela Simonovic\",\"doi\":\"10.2298/sos231017056p\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As part of research on the influence of selenium as dopant on bismuth telluride, a successful synthesis of single crystal was carried out. Single crystal of p type conductivity, with the given compound formula, Bi2Te2.88Se0.12, was obtained by the Bridgman process. The obtained empirical formula does not deviate from the given compound formula. Single crystal was characterized by Hall Effect system based on the Van der Pauw method. Also, bulk sample was characterized by Seebeck coefficient (S), thermal conductivity (?) and electrical resistivity (?) measurements, as ? function of temperature in the range of 40 - 320?C by ? home made impedance meter. The prepared single crystal has a figure of merit (Z) of 2.16 x 10-3 K-1 at 40?C. Values of ZT are about 1.0 at 27?C for commercialized p and n type of bismuth telluride ingots. T is absolute temperature.\",\"PeriodicalId\":21592,\"journal\":{\"name\":\"Science of Sintering\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science of Sintering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2298/sos231017056p\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science of Sintering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2298/sos231017056p","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 0
摘要
作为硒作为掺杂剂对碲化铋影响研究的一部分,成功地合成了单晶。采用Bridgman法制备了p型电导率单晶,其分子式为Bi2Te2.88Se0.12。所得的经验公式不偏离给定的复合公式。利用范德泡法对单晶进行了霍尔效应表征。同时,用塞贝克系数(S)、导热系数(?)和电阻率(?)对样品进行了表征。功能温度范围在40 - 320?C by ?自制阻抗计。制备的单晶在40℃时的优值(Z)为2.16 × 10-3 K-1。ZT的值在27?C为商品化p型和n型碲化铋锭。T是绝对温度。
Investigation of Bi2Te2.88Se0.12 bulk single crystal produced using Bridgman method
As part of research on the influence of selenium as dopant on bismuth telluride, a successful synthesis of single crystal was carried out. Single crystal of p type conductivity, with the given compound formula, Bi2Te2.88Se0.12, was obtained by the Bridgman process. The obtained empirical formula does not deviate from the given compound formula. Single crystal was characterized by Hall Effect system based on the Van der Pauw method. Also, bulk sample was characterized by Seebeck coefficient (S), thermal conductivity (?) and electrical resistivity (?) measurements, as ? function of temperature in the range of 40 - 320?C by ? home made impedance meter. The prepared single crystal has a figure of merit (Z) of 2.16 x 10-3 K-1 at 40?C. Values of ZT are about 1.0 at 27?C for commercialized p and n type of bismuth telluride ingots. T is absolute temperature.
期刊介绍:
Science of Sintering is a unique journal in the field of science and technology of sintering.
Science of Sintering publishes papers on all aspects of theoretical and experimental studies, which can contribute to the better understanding of the behavior of powders and similar materials during consolidation processes. Emphasis is laid on those aspects of the science of materials that are concerned with the thermodynamics, kinetics and mechanism of sintering and related processes. In accordance with the significance of disperse materials for the sintering technology, papers dealing with the question of ultradisperse powders, tribochemical activation and catalysis are also published.
Science of Sintering journal is published four times a year.
Types of contribution: Original research papers, Review articles, Letters to Editor, Book reviews.