Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data

Ba(NdxTi(1-2x)Nbx)O3 and (Na0.5Bi0.5)(NdyTi1-2yNby)O3 relaxor ferroelectric materials were prepared through solid state sintering route. The polarization as a function of electric field (PE loops) were measured with Radiant technologies PE loop tracer. In the present studies we have extended the surface charge density studies of metal oxide semiconductor (MOS) structure to the polarization studies of metal ferroelectric and metal (MFM) structure in bulk form by combining it with the modified Glazounov and Arrhenius equations. The simulation is in good agreement the experimental data. In the case of Ba(NdxTi(1-2x)Nbx)O3 ceramics the value of dipole moment (p) are 2.24x10−26 C.m, 1.80x10−26 C.m, 2.23x10−26 C.m & 2.21x 10−26 C.m for x = 0.025, 0.05, 0.1 & 0.2, respectively. The values of surface potential (Ψp) are 466 meV, 503 meV, 552 meV & 505 meV for x = 0.025, 0.05, 0.1 & 0.2, respectively.